Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor.
Identifieur interne : 002C47 ( Main/Exploration ); précédent : 002C46; suivant : 002C48Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor.
Auteurs : RBID : pubmed:15895099English descriptors
- KwdEn :
- MESH :
- chemical , analysis : Alloys, Antimony, Indium, Manganese.
- chemical , chemistry : Alloys, Antimony, Indium, Manganese.
- methods : Crystallization.
- Magnetics, Materials Testing, Pressure, Semiconductors, Temperature.
Abstract
Recent advances in III(1-x)Mn(x)V ferromagnetic semiconductors (for example in Ga(1-x)Mn(x)As) have demonstrated that electrical control of their spin properties can be used for manipulation and detection of magnetic signals. The Mn(2+) ions in these alloys provide magnetic moments, and at the same time act as a source of valence-band holes that mediate the Mn(2+)-Mn(2+) interactions. This coupling results in the ferromagnetic phase. In earlier workit was shown that the ferromagnetic state can be enhanced or suppressed by varying the carrier density. Here we demonstrate that, by using hydrostatic pressure to continuously tune the wavefunction overlap, one can control the strength of ferromagnetic coupling without any change in the carrier concentration. Tuning the exchange coupling by this process increases the magnetization spectacularly, and can even induce the ferromagnetic phase in an initially paramagnetic alloy. These results may open new directions for strain-engineering of nanodevices.
DOI: 10.1038/nmat1388
PubMed: 15895099
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor.</title><author><name sortKey="Csontos, M" uniqKey="Csontos M">M Csontos</name><affiliation wicri:level="1"><nlm:affiliation>Electron Transport Research Group of the Hungarian Academy of Sciences and Department of Physics, Budapest University of Technology and Economics, 1111 Budapest, Hungary.</nlm:affiliation><country xml:lang="fr">Hongrie</country><wicri:regionArea>Electron Transport Research Group of the Hungarian Academy of Sciences and Department of Physics, Budapest University of Technology and Economics, 1111 Budapest</wicri:regionArea></affiliation></author><author><name sortKey="Mih Ly, G" uniqKey="Mih Ly G">G Mihály</name></author><author><name sortKey="Jank, B" uniqKey="Jank B">B Jankó</name></author><author><name sortKey="Wojtowicz, T" uniqKey="Wojtowicz T">T Wojtowicz</name></author><author><name sortKey="Liu, X" uniqKey="Liu X">X Liu</name></author><author><name sortKey="Furdyna, J K" uniqKey="Furdyna J">J K Furdyna</name></author></titleStmt><publicationStmt><date when="2005">2005</date><idno type="doi">10.1038/nmat1388</idno><idno type="RBID">pubmed:15895099</idno><idno type="pmid">15895099</idno><idno type="wicri:Area/Main/Corpus">002E96</idno><idno type="wicri:Area/Main/Curation">002E96</idno><idno type="wicri:Area/Main/Exploration">002C47</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloys (analysis)</term><term>Alloys (chemistry)</term><term>Antimony (analysis)</term><term>Antimony (chemistry)</term><term>Crystallization (methods)</term><term>Indium (analysis)</term><term>Indium (chemistry)</term><term>Magnetics</term><term>Manganese (analysis)</term><term>Manganese (chemistry)</term><term>Materials Testing</term><term>Pressure</term><term>Semiconductors</term><term>Temperature</term></keywords><keywords scheme="MESH" type="chemical" qualifier="analysis" xml:lang="en"><term>Alloys</term><term>Antimony</term><term>Indium</term><term>Manganese</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Alloys</term><term>Antimony</term><term>Indium</term><term>Manganese</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Crystallization</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Magnetics</term><term>Materials Testing</term><term>Pressure</term><term>Semiconductors</term><term>Temperature</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Recent advances in III(1-x)Mn(x)V ferromagnetic semiconductors (for example in Ga(1-x)Mn(x)As) have demonstrated that electrical control of their spin properties can be used for manipulation and detection of magnetic signals. The Mn(2+) ions in these alloys provide magnetic moments, and at the same time act as a source of valence-band holes that mediate the Mn(2+)-Mn(2+) interactions. This coupling results in the ferromagnetic phase. In earlier workit was shown that the ferromagnetic state can be enhanced or suppressed by varying the carrier density. Here we demonstrate that, by using hydrostatic pressure to continuously tune the wavefunction overlap, one can control the strength of ferromagnetic coupling without any change in the carrier concentration. Tuning the exchange coupling by this process increases the magnetization spectacularly, and can even induce the ferromagnetic phase in an initially paramagnetic alloy. These results may open new directions for strain-engineering of nanodevices.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">15895099</PMID><DateCreated><Year>2005</Year><Month>06</Month><Day>01</Day></DateCreated><DateCompleted><Year>2005</Year><Month>07</Month><Day>05</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Print">1476-1122</ISSN><JournalIssue CitedMedium="Print"><Volume>4</Volume><Issue>6</Issue><PubDate><Year>2005</Year><Month>Jun</Month></PubDate></JournalIssue><Title>Nature materials</Title><ISOAbbreviation>Nat Mater</ISOAbbreviation></Journal><ArticleTitle>Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor.</ArticleTitle><Pagination><MedlinePgn>447-9</MedlinePgn></Pagination><Abstract><AbstractText>Recent advances in III(1-x)Mn(x)V ferromagnetic semiconductors (for example in Ga(1-x)Mn(x)As) have demonstrated that electrical control of their spin properties can be used for manipulation and detection of magnetic signals. The Mn(2+) ions in these alloys provide magnetic moments, and at the same time act as a source of valence-band holes that mediate the Mn(2+)-Mn(2+) interactions. This coupling results in the ferromagnetic phase. In earlier workit was shown that the ferromagnetic state can be enhanced or suppressed by varying the carrier density. Here we demonstrate that, by using hydrostatic pressure to continuously tune the wavefunction overlap, one can control the strength of ferromagnetic coupling without any change in the carrier concentration. Tuning the exchange coupling by this process increases the magnetization spectacularly, and can even induce the ferromagnetic phase in an initially paramagnetic alloy. These results may open new directions for strain-engineering of nanodevices.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Csontos</LastName><ForeName>M</ForeName><Initials>M</Initials><Affiliation>Electron Transport Research Group of the Hungarian Academy of Sciences and Department of Physics, Budapest University of Technology and Economics, 1111 Budapest, Hungary.</Affiliation></Author><Author ValidYN="Y"><LastName>Mihály</LastName><ForeName>G</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Jankó</LastName><ForeName>B</ForeName><Initials>B</Initials></Author><Author ValidYN="Y"><LastName>Wojtowicz</LastName><ForeName>T</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Liu</LastName><ForeName>X</ForeName><Initials>X</Initials></Author><Author ValidYN="Y"><LastName>Furdyna</LastName><ForeName>J K</ForeName><Initials>JK</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType><PublicationType>Research Support, U.S. Gov't, Non-P.H.S.</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2005</Year><Month>05</Month><Day>15</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nat Mater</MedlineTA><NlmUniqueID>101155473</NlmUniqueID><ISSNLinking>1476-1122</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Alloys</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>42Z2K6ZL8P</RegistryNumber><NameOfSubstance>Manganese</NameOfSubstance></Chemical><Chemical><RegistryNumber>9IT35J3UV3</RegistryNumber><NameOfSubstance>Antimony</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Alloys</DescriptorName><QualifierName MajorTopicYN="N">analysis</QualifierName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Antimony</DescriptorName><QualifierName MajorTopicYN="N">analysis</QualifierName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Crystallization</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="N">analysis</QualifierName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Magnetics</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Manganese</DescriptorName><QualifierName MajorTopicYN="N">analysis</QualifierName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Pressure</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Temperature</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2004</Year><Month>12</Month><Day>11</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2005</Year><Month>4</Month><Day>06</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2005</Year><Month>5</Month><Day>15</Day></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2005</Year><Month>5</Month><Day>17</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2005</Year><Month>7</Month><Day>6</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2005</Year><Month>5</Month><Day>17</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">nmat1388</ArticleId><ArticleId IdType="doi">10.1038/nmat1388</ArticleId><ArticleId IdType="pubmed">15895099</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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